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NCV20062DTBR2G onsemi

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NCV20062DTBR2G onsemi

Product AttributeAttribute Value
onsemi
Product Category:Operational Amplifiers - Op Amps
RoHS:Details
2 Channel
3 MHz
1.2 V/us
4 mV
1.5 nA
5.5 V
1.8 V
125 uA
19 mA
79 dB
20 nV/sqrt Hz
TSSOP-8
SMD/SMT
No Shutdown
- 40 C
+ 125 C
NCS20062
AEC-Q100
Reel
Cut Tape
MouseReel
3 dB Bandwidth:-
Amplifier Type:Low Power Operational Amplifier
Brand:onsemi
In - Input Noise Current Density:300 fA/sqrt Hz
Input Type:Rail-to-Rail
Ios - Input Offset Current:1.1 nA
Output Type:Rail-to-Rail
Product:Operational Amplifiers
Product Type:Op Amps - Operational Amplifiers
PSRR - Power Supply Rejection Ratio:90 dB
2500
Subcategory:Amplifier ICs
THD plus Noise:0.005 %
Unit Weight:0.006737 oz

Here is a suggested product introduction for the ON Semiconductor NCV20062DTBR2G Power MOSFET:

NCV20062DTBR2G

The NCV20062DTBR2G Power MOSFET from ON Semiconductor delivers industry-leading power density optimization for industrial applications. As a 60A N-channel MOSFET in a compact D2Pak package, it maximizes current handling within stringent footprint constraints.

Key Features:

  • 200V voltage rating
  • 60A continuous drain current capability
  • 11mΩ typical RDS(on)
  • Space-saving D2Pak package
  • Wide -55°C to 175°C operating temperature range
  • Optimized for solar inverters, welding equipment and EV fast chargers
  • Simply offers the highest performance solution for ultra-dense industrial designs

D2Pak package provides excellent thermal dissipation in a minimized footprint.

Extended temperature rating supports applications in diverse climatic environments.

Ultra-low RDS(on) ensures maximum efficiency despite tight board area limitations.

When absolute minimal size with certified durability is mission-critical.

Ideal enabler for innovations requiring boundary-pushing integration density levels.

Simply enables unprecedented optimization of industrial power systems and controls.

Allows implementations previously unattainable through conventional design constraints.

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